Polytypes of colourless and coloured single crystals of silicon carbide (SiC) grown on SiC substrates by chemical vapour deposition are researched making use of Raman spectroscopy supplemented by scanning electron microscopy (SEM) and X-ray diffraction (XRD) analyses. The SEM analysis of the defect stacking faults, inclusions of defects as well https://www.facebook.com/permalink.php?story_fbid=pfbid025zFgmpjaoQryR3ytytyMtikZ1zndFo3LMufu8fCzGfdeRn1tJBmDF2JeaaLNmktCl&id=61562415773754&__cft__[0]=AZWQkd6DNxgKFF3ezpBvpLlDKQ_yJIyPbdeg945OszaMul-BOlvs0xO4cjW2ltNAUpzvaafoi0jMn-THoRnzr5ewj08xOue8Vz7grkRu9-8GlEDu9TgvaTSP2D_0lF8t3Hx8RXQeqBqhpZBes5W2T3oPLUlVsruXWzeZuK3CZKILXAJ8J77ySQ64UrBjOhaDixt2x21lzKw5DmCpeHWg0GZI&__tn__=%2CO%2CP-R